1kV MDmesh MOSFETs with FRDs boost converter power density
As super-junction MOSFETs, the new devices – in voltage ratings from 950V to 1050V – deliver improved switching performance with lower on-resistance (RDS(ON)) and higher current rating per die area compared to ordinary planar MOSFETs. They enable designers to enhance converter efficiency, as well as increase power density by using fewer parallel components.
With the fast-recovery body diode, the new devices enable higher efficiency in ZVS LLC resonant converters, which are chosen for applications that require high efficiency over a wide input-voltage range. Other types of bridged converters, as well as boost DC/DC converters for battery charging, also benefit from the reduced losses and enhanced dynamic performance of these devices. Compared with currently available VHV fast-diode MOSFETs, the DK5 devices from ST claim the best reverse-recovery time (trr) and lowest MOSFET gate charge (Qg) and RDS(ON), with the favourable output and input capacitances (Coss, Ciss) of a super-junction device.
The DK5 family gains six new parts in TO-247, TO-247 Long-Lead, Max247, and ISOTOP power packages. Volume production has started for the STWA40N95DK5, STY50N105DK5, and STW40N95DK5, with prices starting from $8.85 (1000).
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