200-W GaN transistor supports 3.5 GHz bandwidth
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By
Jean-Pierre Joosting
The GaN HEMT offers up to 11 dB of associated gain in CW applications or 14 dB of gain in pulsed applications. Operating from a 50-V supply, the transistor draws only 300 mA in class AB configurations with 44% typical efficiency. Further, the device is capable of withstanding mismatches up to VSWR = 10:1.
This rugged GaN HEMT has a rise/fall time of 9 ns and is offered in an earless Gemini package. A bolt-down version is offered as the CLF1G0035-200P.
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