200V and 250V fast diodes optimised for body diode hard commutation
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By
eeNews Europe
The latest generation of Power MOSFETs is optimised for body diode hard commutation and leads to higher device ruggedness, lower voltage overshoot and reduced reverse recovery loss. This results in highest system reliability especially in hard switching applications such as Telecom Systems, Industrial Power Supplies, Class D Audio Amplifiers, Motor Control (for 48 – 110V systems) and DC/AC inverters.
Infineon; www.infineon.com
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