200V eGaN FET doubles performance

200V eGaN FET doubles performance

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By Nick Flaherty

EPC has halved the size and doubled the performance of its eGaN transistors for 48V designs.

The EPC2215 and EPC2207 200V eGaN FETs are aimed at applications such as synchronous rectification, solar MPPTs (maximum power point tracker), DC-DC converters (hard-switched and resonant), and multilevel high voltage converters.

The EPC2215 (8 mΩ, 162 Apulsed) and the EPC2207 (22 mΩ, 54 Apulsed) are about half the size of the previous 200V eGaN devices at 4.6 x 1.6mm with 33 percent lower on-resistance. The Gate charge (QG) is ten times smaller than the silicon MOSFET benchmark like all eGaN FETs, there is no reverse recovery charge (QRR) enabling lower distortion class D audio amplifiers as well as more efficient synchronous rectifiers and motor drives.

“This latest generation of eGaN FETs achieve higher performance in a smaller, more thermally efficient size, and at a comparable cost to traditional MOSFETs.  The inevitable displacement of the aging power MOSFET with GaN devices is becoming clearer every day,” said Alex Lidow, EPC’s co-founder and CEO.

EPC worked with the Semiconductor Power Electronics Center (SPEC) at University of Texas at Austin to develop a 400 V, 2.5 kW-capable eGaN FET-based four-level flying capacitor multilevel bridgeless totem-pole rectifier that is suitable for data centre applications using the new EPC2215 200 V device. “The advantageous characteristics of eGaN FETs allowed this converter to achieve high power density, ultra-high efficiency, and low harmonic distortion,” said Professor Alex Huang from the University of Texas at Austin.

The devices and boards are available from Digi-Key priced from $1.49 for the devices and $118.75 for the boards.

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