200V MOSFET for e-mobility designs
Infineon Technologies has launched a 200V MOSFET range for applications such as e-scooters, micro-EVs, and E-forklifts.
The OptiMOS 6 MOSFET family from Infineon has improved conduction losses and switching behaviour to reduce the electromagnetic interference (EMI) and switching losses. This benefits various switching applications, including servers, telecom and energy storage systems (ESS). The combination of a wide safe operating area (SOA) and lower on resistance is suitable for static switching applications such as battery management systems.
The OptiMOS 6 200 V portfolio has a 42 percent lower R DS(on) over the OptiMOS 3 family for reduced conduction losses and increased output power. The softness of the diode behaviour is three times that of the OptiMOS 3 and combined with up to 89 percent reduction in Q rr(typ), the switching and EMI behaviors are significantly improved.
The technology also features improvements in parasitic capacitance linearity (C oss and C rss), which reduces oscillation during switching and lowers voltage overshoot. A tighter V GS(th) spread and lower transconductance aid in MOSFET paralleling and current sharing, leading to more uniform temperatures and reducing the number of paralleled MOSFETs.
The OptiMOS 6 200 V products feature an improved SOA and are classified as MSL 1 according to J-STD-020. These RoHS-compliant, lead-free products align with current industry standards.
The OptiMOS 6 200 V products are available in various packages making them ideal for a broad range of applications. This wide package portfolio includes the PQFN 3.3.×3.3, SuperSO8 5×6, TOLL, TO-220, D 2PAK-7P, as well as the D 2PAK-3P. All variants can be ordered now.
www.infineon.com/optimos-6-200v.
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