24V, 5A, power controllers integrate control & protection into 4.8 mm²
Using Silego’s CuFET technology, these new products require only a 4.8 mm² footprint and exhibit low thermal resistance for high-current operation. Compared to discrete FETs currently used in high-voltage applications, the HFET1 products combine high-performance nFET structures, charge pumps, multiple protection and control circuits into small-footprint, feature-rich, single-channel products. Designed to operate over a -40°C to 85°C range, these high-voltage integrated power control switches are available in low thermal resistance packaging. Use them, the company suggests, in high voltage power-rail switching; 12V, 15V, and 20V point-of-load power distribution; IT and office equipment; and motor drives.
The first set of high-voltage products include:
|
Product |
VIN Range |
RDSON |
Reverse-Current |
Output Monitor |
|
SLG59H1005V |
4.5 V – 22 V |
53 mΩ |
X |
MOSFET IDS |
|
SLG59H1006V |
4.5 V – 22 V |
13.3 mΩ |
|
MOSFET IDS |
|
SLG59H1007V |
4.5 V – 22 V |
13.3 mΩ |
|
Load Power (VIN x IDS) |
|
SLG59H1008V1 |
12 V or 24 V |
13.3 mΩ |
|
MOSFET IDS |
The -08V part is specifically designed for enterprise printer/copier applications.
Key features include;
-High-performance nFET MOSFETs
-Low RDS(ON): 13.3 mΩ at VIN = 24 V
-Ultra-low ΔRDS(ON)/ΔVIN: <0.05 mΩ/V
-Ultra-low ΔRDS(ON)/ΔT: <0.06 mΩ/°C
Internal protection features
-Automatic nFET SOA protection
-Pin-programmable overvoltage and undervoltage lockout windows
-Fixed and capacitor-programmable inrush current control
-Fixed and resistor-programmable current limit
-Short-circuit current
-Thermal shutdown
-Fast VOUT discharge
-Open-drain FAULT signalling
– MOSFET IDS analogue current or output load power monitors
Silego; www.silego.com
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