25V n-channel power MOSFET with lowest on-resistance
With a gate charge of 61nC, the Vishay Siliconix SiRA20DP offers the lowest combination of gate charge and on-resistance figure of merit (FOM) for devices with on-resistance below 0.6 mΩ.
Offered in the 6 mm by 5 mm PowerPAK SO-8 package, the device released today is one of the only two 25 V MOSFETs in the world with maximum on-resistance below 0.6 mΩ. In comparison, the SiRA20DP offers lower typical gate charge of 61 nC and a 32 % lower FOM of 0.035 Ω*nC. All other 25 V n-channel MOSFETs feature on-resistance that is 11% higher or more.
The SiRA20DP’s low on-resistance minimises conduction power losses to improve system efficiency and enable higher power density, which is ideal for OR-ring functions in redundant power architectures. The device’s low FOM enhances switching performance for DC/DC conversion in telecom and server power supplies, battery switching in battery systems, and load switching for 5 V to 12 V input rails.
The MOSFET is 100 % RG- and UIS-tested, RoHS-compliant, and halogen-free.
Samples and production quantities of the SiRA20DP are available now.
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