28-V, 30-W GaN HEMT bare die targets diverse applications
The GaN HEMT die exhibits 12 dB typical small signal gain at 8 GHz, 17 dB typical small signal gain at 4 GHz, and 30 W typical PSAT. Additionally, due to the superior material properties of GaN compared to silicon (Si) and gallium arsenide (GaAs), the GaN HEMT die also deliver higher breakdown voltage, higher temperature operation, higher efficiency, higher thermal conductivity, higher power density, and wider bandwidths than Si and GaAs transistors.
As such, the CGH80030D is ideal for use in a diverse range of applications, including: UHF-, L-, S-, and C-Band radar; broadband, public safety, and ISM (industrial, scientific, and medical) amplifiers; broadcast, satellite, and tactical communications amplifiers; UAV data links; cellular infrastructure; test instrumentation; and two-way private radios, among others.
“The increasingly widespread adoption of GaN-on-SiC RF technology in applications including: military and aerospace systems, telecom base stations, wideband test equipment, civil radar, and medical applications is driving R&D efforts at Wolfspeed,” said Jim Milligan, RF and microwave director, Wolfspeed. “As such, the new 28-V, 30-W GaN HEMT die we launched at WAMICON enables enhanced innovation, performance, and efficiency across a broad spectrum of RF and microwave applications in both the commercial and military sectors.”
During the event, Wolfspeed also revealed that their GaN-on-SiC RF power transistors recently completed qualification testing to demonstrate compliance with NASA EEE-INST-002 Level 1 reliability standards for satellite communications and radar equipment.
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