2DSPIN-TECH: A new Horizon Europe project creating memories
A brand-new Horizon Europe graphene-spintronic project kicks off with huge potential to provide reliable memory storage solutions
Two-dimensional (2D) materials and their heterostructures for building all-2D spintronic devices enable faster speed and operate at very low current densities compared to conventional materials.
The 2D Heterostructure Non-volatile Spin Memory Technology Project, also called 2DSPIN-TECH, will use 2D quantum materials and their heterostructures to develop memory devices based on spintronics. To achieve this, the project brings together pioneering and world-leading experimental and theoretical researchers and a company in the field of spintronics and 2D materials in Europe.
The project aims to utilise the spin degree of freedom from electron, to provide a breakthrough for next-generation magnetic random-access memory (MRAM) technologies using atomically thin 2D materials heterostructures. This device architecture will incorporate 2D spin-orbit materials (2DSOMs) and 2D ferromagnets (2DFM) in van der Waals (vdW) heterostructures to exploit the fundamental interaction between charge, spin and orbital degrees of freedom. It is expected to provide high-speed, low-power and reliable memory solutions. These developments will open opportunities for Europe to get back into the memory market.
“2DSPIN-TECH goes much beyond what has been studied in the spintronic work package of the Graphene Flagship, by exploring a more comprehensive range of mechanisms and all-2D-devices elaborated with novel materials,” says project coordinator Saroj Dash, professor in Quantum Device Physics from Chalmers University of Technology.
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