4-pin TO-247 for Toshiba’s DTMOS IV-H power MOSFETs
In conventional three pin TO-247 packages, says Toshiba, parasitic induction at the source pin causes increased losses with increasing switching frequency. With this TO-247 4L package an additional source signal terminal is separated as a ‘Kelvin source’. By using this source pin, di/dt and switching efficiency can be increased. Compared to a three pin solution, the switching loss E(on) will be reduced by about 15% in the four-pin solution .
DTMOS IV-H chips are made using Toshiba’s Deep Trench technology that delivers lower ON resistance at higher temperatures, compared to conventional super-junction MOSFETs. It also offers reduced turn-off switching losses (EOSS) than previous technology generations. The combination of smaller increases in RDS(ON) at high temperatures and reduced EOSS provides higher efficiency for power supplies and assists designers in minimising system size.
The four-pin TO-247 packaging style will initially be seen on four members of the DTMOS IV-H range, the TK25Z60X, TK31Z60X, TK39Z60X and TK62Z60X all of which feature VDSS of 600V with RDS(ON) values of 125 down to 40 mOhm.
Toshiba Electronics Europe; www.toshiba.semicon-storage.com
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