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40-V and 60-V N-channel power MOSFETs claim industry-low on-resistance in a PowerPAK SO-8 package

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By eeNews Europe


The 60 V SiR662DP offers on-resistance of 2.7 mΩ at 10 V and 3.5 mΩ at 4.5 V, and an FOM of 172.8 mΩ-nC at 10 V and 105 mΩ-nC at 4.5 V. The device’s on-resistance values at 10 V and 4.5 V are 3.5 % lower and 27 % lower than those of the closest competing MOSFET, respectively, while its FOM is 23 % lower at 10 V and 57 % lower at 4.5 V. These low values will reduce switching losses across the whole operating range of the device.

The 40 V SiR640DP offers on-resistance of 1.7 mΩ at 10 V and 2.2 mΩ at 4.5 V, and an FOM of 128 mΩ-nC at 10 V and 76 mΩ-nC at 4.5 V. The device’s on-resistance value at 4.5 V is 4 % lower than the next best competing MOSFET, while its FOM is 15.5 % lower at 4.5 V.

Both devices are built on a new silicon technology utilizing an optimized trench density and a unique gate structure. For designers, their lower on-resistance translates into lower conduction losses for reduced power consumption, especially at heavy loads. Their low FOMs reduce switching losses in high-frequency and switching applications, particularly at light loads and stand-by mode. The devices’ high efficiency allows designers to increase the power density of their systems and/or provide lower power loss, greener solutions.

The SiR662DP and SiR640DP are intended for secondary side synchronous rectification in DC/DC and AC/DC converters, primary side switching in DC/DC converters, point-of-load modules, motor drives, bridge inverters, and mechanical relay replacement applications. Typical end products will include telecom power supplies, industrial automation and professional gaming systems, uninterruptible power supplies (UPS), and consumer applications.

The MOSFETs’ 4.5 V rating will give many designers the opportunity to use a 5 V power rail in their systems, already present for powering digital logic, without having to create and find space for a 10 V power rail. The 4.5 V rating will also significantly lower gate drive losses while allowing lower-voltage/lower-cost 5 V PWM ICs to be utilized.

Both devices are 100 % Rg and UIS tested. They are halogen-free according to the IEC 61249-2-21 definition and compliant to RoHS Directive 2002/95/EC.

Samples and production quantities of the SiR662DP and SiR640DP are available now, with lead times of 16 weeks for large orders.

Visit Vishay Intertechnology at www.vishay.com


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