40-V MOSFETs cut complexity of synchronous rectifiers
With on-state resistance as low as 1.7 milliohms and a sub-1 milliohm Ron vesion soon to be released), the TrenchT4 devices enable a reduction in the number of MOSFETs needed, especially in synchronous rectification. Paralleling multiple devices may not be necessary due to their high-current carrying capability and high power density, thereby simplifying the power system and improving its reliability at the same time.
The new MOSFETs are avalanche rated as well and can withstand a junction temperature of up to 175°C making them robust against device failures caused by voltage transients and the accidental turn-on of parasitic bipolar transistors inherent in the MOSFET structure. The low reverse recovery charge of the body diode also mitigates voltage overshoots and reduces electromagnetic interference (EMI).
Applications include synchronous rectification, high-current switching power supplies, battery powered electric motors, resonant-mode power supplies, electronic ballasts, Class-D audio amplifiers, electric forklifts, portable power tools and more.
The TrenchT4 Power MOSFETs are available in TO-220, TO-263(3 or 7-lead), SOT-227 and TO-247 packages. Some example part numbers are IXTH270N04T4, IXTP270N04T4, IXTA340N04T4-7, and IXTH340N04T4. The first two are rated at 270A and the last two 340A.
Additional product information can be obtained by visiting www.ixys.com
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