With Infineon starting volume production of GaN later this year and ROHM second sourcing die from GaN Systems in standard packaging, the wideband technologies are driving forward.
- INFINEON TO START VOLUME PRODUCTION OF GAN THIS YEAR
- GAN SYSTEMS, ROHM TEAM FOR SECOND SOURCING AND R&D
This year’s exhibition highlights the increasing interest in power technologies, with 11,602 visitors, up from 10,836 in 2017 visiting 506 exhibitors and 803 attending the conference.
Arne Hendrik Wienhausen of RWTH Aachen, Germany, won the conference award for the best paper, discussing a “Highly Integrated Two-Phase SiC Boost Converter with 3D Printed Fluid Coolers and 3D Printed Inductor Bobbins”, highlighting the increasing role of SiC. This technology is more well established in industrial and automotive designs, and ROHM announced plans to boost its SiC production in Japan to take advantage of this growth.
All of this is demonstrating the emergence of both GaN and SiC. While established manufacturers such as Panasonic were displaying the latest designs, startups such as Exagan were showing new levels of integration. Other major players such as Texas Instruments and Dialog Semiconductor have GaN plans in the wings.
- FRENCH DEVELOPER COMBINES NEW GAN FET AND DRIVER IN SINGLE PACKAGE
- SO WHERE IS THIS POWER REVOLUTION THEN?
After 40 years, the power industry hasn’t slowed down. This year shows that the technology is driving forward even faster.
More show coverage:
- DRIVING GAN TECHNOLOGY INTO AUTOMOTIVE DESIGNS
- ISOLATING GATE DRIVER USES WIRELESS POWER
- DESIGNS USE POWER AND RF GAN DEVICES FOR 100W AND 300W WIRELESS CHARGERS
- 1200V SIC SCHOTTKY DIODES REDUCE POWER DISSIPATION AND EQUIPMENT SIZE
- CREE LAUNCHES INTO DRIVETRAINS WITH 1200V SIC MOSFET
- INFINEON TARGETS AUTOMOTIVE MARKETS WITH SIC TECHNOLOGY
- PANASONIC BOOSTS GAN TECHNOLOGY WITH INTEGRATED POWER SWITCH