40V, 220A MOSFET has RDS(on) of 0.9mΩ
The BUK9J0R9-40H Trench 9, 40 V superjunction MOSFET is aimed at application sup to 1.2kW and is packaged in the rugged, electrically- and thermally-efficient LFPAK56E that is up to 81% smaller than bare die modules, D2PAK or D2PAK-7 devices. The MOSFET is also lower cost than larger D2PAK devices.
As well as reducing RDS(on) the new devices also feature an improved DC current rating of 220 A – a first for the automotive Power-SO8 footprint. This enables higher power density on a small footprint, which is especially valuable for safety-critical automotive applications that require dual redundant circuitry. The use of Superjunction technology delivers a higher Avalanche capability and Safe Operating Area for improved performance under fault conditions.
“Nexperia is the only company with a low voltage Superjunction MOSFET platform. In terms of overall reliability and performance, Nexperia is the market leader – the rugged Trench 9 superjunction technology combined with the ultra-robust LFPAK56 and LFPAK56E packages gives the engineers the confidence to use this device in their safety-critical designs,” said Norman Stapelberg, Product Marketing Manager at Nexperia, the discrete and power spin off of NXP.
The LFPAK56 Trench 9 MOSFETs can be easily parallelised for high current applications and suit automotive functions such as motor control (brushed and brushless) for power steering, transmission control, ABS, ESC, pumps (water, oil and fuel), fan speed control, reverse battery protection and DC/DC converters.
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