40V GaN transistor package is 8x smaller than equivalent MOSFET

40V GaN transistor package is 8x smaller than equivalent MOSFET

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By Nick Flaherty

The EPC2049 fits into chip scale packaging to give power systems designers with a 40 V, 5 mΩ power transistor for smaller point of load converters, LiDAR sensors and low inductance motor drives as wells as envelope tracking power supplies and class-D audio amplifiers.

The EPC2049 GaN FET has a voltage rating of 40 V and maximum RDS(on) of 5 mΩ with a 175 A pulsed output current.

The chip-scale packaging measures 2.5 mm x 1.5 mm (3.75 mm2)  and handles thermal conditions far better than the plastic packaged MOSFETs as the heat is dissipated directly to the environment with chip-scale devices, whereas the heat from the MOSFET die is held within a plastic package. 

“The EPC2049 demonstrates how EPC and gallium nitride transistor technology is increasing the performance and reducing the cost of eGaN devices. The EPC2049 is further evidence that the performance and cost gap of eGaN technology with MOSFET technology continues to widen,” said Alex Lidow, EPC’s co-founder and CEO.

The EPC2049 eGaN FET is priced for 1K units at $2.19 each

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