The new 40 V MOSFETs are housed in the miniature, LFPAK33 package which has a footprint of only 10.9 mm² and a pitch of just 0.65 mm, devices use Nexperia’s Trench 9 technology. This results in a reduction in RDS(on) of 48% when compared to previous technology devices, covering a range of applications from 30 W up to 300 W. BUK7M3R3-40H and BUK9M3R3-40H (Standard Level and Logic Level) devices feature an RDS(on) of just 3.3 mΩ.
Improved RDS(on) and current capability allows the LFPAK33 package to replace larger power styles at a lower cost with comparable product performance, where traditionally DPAK-packaged devices which are 80% larger than LFPAK33 devices have been used. Rugged, Trench 9 Superjunction technology also delivers a higher Avalanche capability and greater Safe Operating Area (SOA) for improved performance under fault conditions.
The devices are qualified to AEC-Q101 exceeding the requirements of this standard by more than two times.