40V N-channel low-R automotive power MOSFET
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By
Graham Prophet
TKR74F04PB achieves a low RDS(on) in the automotive 3-pin SMD package; its low RDS(on) of typ 0.6 / max 0.74 mOhm was realised by combining Toshiba’s latest 9th generation trench MOS ‘U-MOS IX’ process with Toshiba’s TO-220SM(W) package. TO-220SM(W) has a wider and shorter source pin than conventional D2PAK (TO-263) packages and contributes to the PCB size reduction with a smaller footprint. TKR74F04PB will conform to AEC-Q101 automotive level qualification requirements.
Toshiba Electronics Europe; www.toshiba.semicon-storage.com
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