45W and 150W MasterGaN devices for power conversion
STMicroelectronics has released integrated GaN power packages for applications up to 45W and 150W.
ST’s MasterGaN concept simplifies migrating from ordinary silicon MOSFETs to GaN wide-bandgap power technology. The devices integrate two 650V power transistors with optimized high-voltage gate drivers and associated safety and protection circuitry, eliminating gate-driver and circuit-layout design challenges. Combined with the higher switching frequencies possible with GaN transistors, these integrated devices enable power supplies that are up to 80% smaller than silicon-based designs as well as extremely robust and reliable.
The MasterGaN3 is aimed at 45W designs while the MasterGaN5 targets 150W switched-mode power supplies, chargers, adapters, high-voltage Power-Factor Correction (PFC), and DC-DC converters. These join the MasterGaN1, MasterGaN2, and MasterGaN4, which target applications from 65W to 400W.
The GaN power transistors of MasterGaN3 devices have asymmetrical on-resistance (Rds(on)) of 225mΩ and 450mΩ, making these devices suited to soft-switching and active-rectification converters. In MasterGaN5 both transistors have 450mΩ Rds(on) for use in topologies such as LLC-resonant and Active Clamp Flyback.
Related articles
- 650V GaN variant targets asymmetrical topologies
- Pin-compatible GaN family combines silicon driver
- GaN system-in-package range extends to 200W
- GaN design for heatsink-free 250W resonant converter
All the MasterGaN family members have inputs compatible with logic signals from 3.3V to 15V, which simplifies connection of a host DSP, FPGA, or microcontroller, and external devices such as Hall sensors. They also integrate protection including low-side and high-side undervoltage lockout (UVLO), gate-driver interlocks, over-temperature protection, and a shutdown pin.
Each MasterGaN device is supported with a dedicated prototype board to help designers jump-start new power-supply projects. The EVALMASTERGAN3 and EVALMASTERGAN5 boards contain circuitry to generate single-ended or complementary driving signals. There is an adjustable dead-time generator, as well as connections for the user to apply a separate input signal or PWM signal, add an external bootstrap diode to help with capacitive loads, and insert a low-side shunt resistor for peak-current-mode topologies.
The devices are housed in a 9mm x 9mm GQFN package optimized for high-voltage applications with 2mm creepage distance between high-voltage and low-voltage pads.
The MasterGaN3 and MasterGaN5 are in production now, priced from $6.08 for MasterGaN3 and $5.77 for MasterGaN5, for orders of 1000 pieces.
Other articles on eeNews Power
- Lilium teams for silicon battery in electric aircraft
- UK consortium to build EV solid-state batteries
- Sakuú teams for 3D printed solid state battery pilot line
- Single chip USB-C hub with power delivery and HDMI
- STMicroelectronics expands 150mm SiC wafer deal with Cree
If you enjoyed this article, you will like the following ones: don't miss them by subscribing to :
