4W RF power module in plastic: and efficient Doherty amplifier components
The AFT05MS004N 4W RF power device is for handheld and mobile radio applications. The device delivers outstanding low power operation and extends the company’s support of mobile radio power levels to the 4W – 75W range. Performance features include high gain to reduce the number of stages, energy efficiency improvements that reduce heat sink form factors, and exceptional ruggedness at a > 65:1 VSWR survivability rating for continuous reliable operation in extreme environments. The AFT05MS004N offer broad bandwidth operation and is characterised at frequencies from 136 to 941 MHz and can operate as low as 2 MHz. It is available in a cost-effective SOT-89 plastic package. The AFT05MS004N is suitable for a range of applications including public safety radios, professional mobile radios, electric metering, M2M communications and industrial drivers.
next; infrastructure RF PAs
Freescale is also introducing its second generation of Airfast RF power solutions, delivering a new level of performance for advanced wireless infrastructure equipment, including GSM/UMTS, CDMA/W-CDMA, LTE, and TD-LTE applications.
Freescale’s newest Airfast family of RF power solutions builds on the success and proven performance of the previous generation. Enhancing first-generation Airfast circuitry – which was comprised of 28V discrete, single-stage power amplifiers – with die, matching network and packaging technologies, the next generation of Airfast technology includes the first production RF power LDMOS parts to achieve 50% efficiency in a Doherty configuration. Second-generation Airfast power amplifiers expand the portfolio’s breadth to include two-stage integrated circuits, incorporating multiple gain stages in a single package; as well as adding new offerings based on gallium nitride (GaN) and 48V LDMOS process technology.
The initial second-generation Airfast products include:
A2T07H310-24S – 300W asymmetrical Doherty transistor for wireless infrastructure applications in the 720-960 MHz frequency band. In a Doherty configuration, this device breaks the 50% efficiency barrier at 8 dB back-off with 55 dBm peak power and 18.9 dB gain in a NI-1230S-4L2L package.
A2T07D160W04S – 160W dual-path transistor for wireless infrastructure applications in the 728-960 MHz frequency band. In Doherty configuration, this device has 51% efficiency at 7 dB output back-off with 52.5 dBm peak power and over 21.5 dB of gain in a NI-780S-4L package.
A2T26H160-24S – 160W RF asymmetrical Doherty transistor for wireless infrastructure applications in the 2496-2690 MHz frequency band. In a Doherty configuration, this device has 47% efficiency at 8 dB back-off with 52.5 dBm peak power and 15.7 dB gain in a NI-780S-4L2L package.
A2I25D012N – 12W RF integrated circuit for wireless infrastructure applications in the 2300-2690 MHz frequency band. In Doherty configuration, this device has 41% efficiency at 8 dB output back-off with 43.5 dBm peak power and 29 dB gain in a new TO-270WB-15 plastic package.
A2I22D050N – 50W RF integrated circuit for wireless infrastructure applications in the 2000-2200 MHz frequency band. In Doherty configuration, this device has 42% efficiency at 8 dB output back-off with 49 dBm peak power and 28 dB gain in a new TO-270WB-15 plastic package.
Freescale; www.freescale.com/RFpower
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