50-V discrete GaN HEMT die operates up to 6 GHz
The 40-W CGHV60040D and 170-W CGHV60170D claim to represent the only 50-V bare GaN HEMT die available on the market and are now available for purchase. A 50-V, 20-W die rated for up to 6 GHz operation and a 50-V, 320-W die rated for 4 GHz operation are scheduled for release by the end of this calendar year.
Cree’s latest 0.4 um, 50-V GaN HEMT die offer hybrid amplifier designers higher gain and efficiency while operating over a broad, instantaneous frequency bandwidth, providing a unique to alternative to silicon (Si) and gallium arsenide (GaAs) technologies. Exhibiting 17 dB typical small signal gain at 6 GHz and 18 dB typical small signal gain at 4 GHz, in addition to 65% typical power added efficiency, the 50-V, 40-W, and 170-W GaN HEMT die are designed for use in Class AB linear amplifiers suitable for linear, pulsed, and CW applications.
The company’s family of 50-V GaN HEMT die are supplied in Gel-Pak® Vacuum Release™ trays, a non-tacky membrane that immobilizes the components to ensure damage-free transportation and storage. The order multiple for the newly released products is 10 GaN HEMT die per Gel-Pak tray.
For assembly information, see the Eutectic Die Bond Procedure application note at:
www.cree.com/RF/Document-Library.
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