512GB UFS v3.1 embedded flash memory sampling
Kioxia Europe is sampling of a new generation of 256 and 512 gigabytes (GB) Universal Flash Storage (UFS) Ver. 3.1 embedded flash memory devices.
The packages are 0.8 and 1.0mm high and increase random read speed by 30 percent for random read and random write by 40 percent from the fifth-generation BiCS FLASH 3D flash memory.
From a total gigabyte perspective, UFS now accounts for the majority of the demand compared to e-MMC, according to market researchers Forward Insights. Combining overall UFS and e-MMC gigabyte demand worldwide, almost 70 percent of the demand this year is for UFS, and this will continue to grow, says the latest report.
“With the new Ver. 3.1 UFS our continued leadership in JEDEC standardization results in another boundaries breakthrough on performance and form factors in the area of embedded non-volatile memories,” said Axel Stoermann, Vice President Memory Marketing & Engineering for Kioxia Europe. “Consequent review and further development of Kioxia’s BiCS FLASH 3D flash memory technology not only provides a new product range of random read and write speed in thinnest packaging formats, the new devices have the potential to be the preferred solution for a broad area of demanding industrial applications.”
Version 2 of the Host Performance Booster (HPB) improves random read performance by using the host side memory to store logical to physical translation tables. While HPB Ver. 1.0 only enables 4-kilobyte chunk size access, HPB Ver. 2.0 enables wider access to boost random read performance.
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