600-V and 650-V N-channel power MOSFETs offer ultra-low gate charge and low gate charge times on-resistance

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By eeNews Europe

With the new E Series technology, on-resistance is reduced by 30% compared with previous-generation S Series devices. Depending on the application, these products can deliver higher power density and achieve new levels of efficiency. Gate drive losses are also reduced due to the lower input capacitance of this new platform.

The 12 E Series devices released today include four 22 A MOSFETs and four 30 A MOSFETs with on-resistance of 190 mΩ and 125 mΩ, respectively, at 10 V. The 22 A and 30 A MOSFETs are available in the TO-220, TO-220 FullPAK, TO-247, and TO-263 (D 2 PAK) packages. In addition, one 47 A device with on-resistance of 64 mΩ at 10 V is offered in the TO-247, and a 24 A, 650 V MOSFET with an on-resistance of 150 mΩ is offered in the TO-220, TO-263 (D 2 PAK), and TO-247 packages.

The ultra-low on-resistance of the E Series translates into extremely low conduction and switching losses to save energy in high-power, high-performance switch mode applications, including power factor correction, server and telecom power systems, welding, plasma cutting, battery chargers, high-intensity discharge (HID) lighting, fluorescent ballast lighting, semiconductor capital equipment, solar inverters, and induction heating.

The devices are designed to withstand high energy pulses in the avalanche and commutation mode with guaranteed limits through 100% UIS testing. The MOSFETs are compliant to RoHS Directive 2002/95/EC.


Samples of these new power MOSFETs are available with lead times of 16 to 17 weeks for production orders.

More information about Vishay Siliconix E Series power MOSFETs at    


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