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600 W GaN on SiC Pulsed power transistor delivers high reliability and low pulse droop

600 W GaN on SiC Pulsed power transistor delivers high reliability and low pulse droop

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By eeNews Europe



The MAGX-001090-600L00 is a gold-metalized, matched GaN on Silicon Carbide, RF power transistor optimized for pulsed avionics applications, such as secondary surveillance radar in air traffic control systems. It provides 600 W of output power with a typical 21.4 dB of gain and 63% efficiency. The device has very low thermal resistance of 0.05 °C/W and best-in-class load mismatch tolerance of 5:1. In addition, the device has the lowest pulse droop of 0.2 dB and also can be used effectively under more demanding Mode-S ELM operating conditions.

The company’s GaN transistor technology has been fully qualified with accelerated, high-temperature lifetime tests and this device has a predicted MTTF of over 600 years at a maximum junction temperature of 200 °C. The device also boasts very high breakdown voltages, which provides customers with reliable and stable operation even in extreme load mismatch conditions.

Typical performance parameters include 1030-1090 MHz frequency, Pout of 600 W, Vd of 50 V, power gain of 21.4 dB, drain efficiency of 63 %, pulse/duty of 32/2 µs/%, pulse droop of 0.2 dB, VSWR of 5:1, Rth of 0.05 °C/W, and MTTF of 5.2 x 10E6.

www.macomtech.com

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