600V, 65 mΩ, n-channel power MOSFET by Vishay, in distribution
Compared to previous 600V E Series MOSFETs, the SiHP065N60E features a low maximum on-resistance of 0.065Ω at 10V, and ultra-low gate charge down to 49 nC, thus cutting on-resistance by 30%, while delivering 44% lower gate charge. The device’s FOM (figur of merit) of 2.8 Ω*nC (RDS(ON)*Qg) is 25% lower than the closest competing MOSFET in the same class. For improved switching performance, the SiHP065N60E provides low effective output capacities Co(er) and Co(tr) of 93 pF and 593 pF, respectively. These values translate into reduced conduction and switching losses to save energy in power factor correction and hard-switched DC/DC converter topologies for telecom, industrial, and enterprise power systems. In the TO-220AB package, the device is RoHS-compliant, halogen-free, and designed to withstand overvoltage transients in the avalanche mode with guaranteed limits trough 100% UIS testing.
Rutronik; www.rutronik24.com
If you enjoyed this article, you will like the following ones: don't miss them by subscribing to :
