600V FETs boost efficiency in low and high power applications
The P7 targets applications such as chargers, adapters, lighting, TV, PC power, solar, server, telecom and EV charging. It is addressing power classes from 100W to 15 kW. The 600V CoolMOS P7 enables efficiency gains of up to 1.5% in the various topologies, and offers up to 4.2C thermal benefits over alternagive switches.
The wide RDS(on) range from 37 mΩ to 600 mΩ for both surface mount (SMD) and through hole packages suits the 600V CoolMOS P7 for diverse applications and power ranges. ESD robustness of more than 2 kV (HBM) protects the device from electro static discharge damage in production, and the rugged body diode protects the device during hard commutation events in LLC circuits.
The 600V CoolMOS C7 Gold (G7) offers optimum figure-of-merit in an SMD TO-Leadless package, featuring lower RDS(on), minimized gate charge QG, reduced energy stored in the output capacitance, and a 4 pin Kelvin connection. This minimizes losses in PFC and LLC circuits and offers a performance gain of 0.6% as well as higher full-load efficiency in PFC circuits. The low parasitic source inductance of 1 nH also contributes to the increased efficiency levels.
The improved thermal properties in a TO-Leadless package enable the usage in higher current designs while SMD technology allows for a less costly mounting process. The 600V C7 Gold features lowest RDS(on), ranging from 28 mΩ to 150 mΩ. Compared to traditional D²PAK, it offers 30% footprint, 50% height and 60% space reduction.
Infineon; www.infineon.com/600v-p7 and www.infineon.com/c7-gold-toll
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