600V gallium nitride FETs with integrated drivers show 99 percent efficiency
The LMG341x family enables designers to create smaller, more efficient and higher-performing designs compared to silicon field-effect transistors (FETs) in AC-DC power supplies, robotics, renewable energy, grid infrastructure, telecom and personal electronics applications.
The GaN FETs provide a smart alternative to traditional cascade and stand-alone GaN FETs by integrating unique functional and protection features to simplify design, enable greater system reliability and optimize the performance of high-voltage power supplies. With integrated 100ns current limiting and overtemperature detection, the devices protect against unintended shoot-through events and prevent thermal runaway, while system interface signals enable a self-monitoring capability.
The ntegrated GaN power stage doubles power density and reduces losses by 80 percent compared to silicon metal-oxide semiconductor field-effect transistors (MOSFETs). Each device is capable of 1MHz switching frequencies and slew rates of up to 100 V/ns.
The portfolio is backed by 20 million hours of device reliability testing, including accelerated and in-application hard switch testing, and each device in the portfolio offers a GaN FET, driver and protection features at 50 mΩ or 70 mΩ to provide a single-chip solution for applications ranging from sub-100 W to 10 kW.
TI is showing a 10kW cloud-enabled grid link developed with Siemens using the LMG3410R050 600-V GaN FET with integrated driver and protection, enabling engineers to achieve 99 percent efficiency and up to 30 percent reduction in power component size compared to a traditional silicon design.
The devices are available now in the TI store in 8-mm-by-8-mm split-pad, quad flat no-lead (QFN) packaging. The LMG3410R050, LMG3410R070 and LMG3411R070 are priced at US$18.69, $16.45 and $16.45, respectively, in 1,000-unit quantities. LMG3410EVM-018, LMG3410-HB-EVM and LMG3411EVM-029 evaluation modules are also available.
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