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600V GaN transistor in a TO-247 package, from Transphorm

600V GaN transistor in a TO-247 package, from Transphorm

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By eeNews Europe



Transphorm is now offering engineering samples of its TPH3205WS transistor, the first 600V GaN transistor in a TO-247 package. Offering 63 mOhm R(on) and 34A ratings, the device uses the company’s Quiet Tab source-tab connection design, which reduces EMI at high dv/dt to enable low switching loss and high-speed operation in power supply and inverter applications. This new device extends Transphorm’s EZ-GaN product portfolio to now support PV inverter designs with power levels ranging from a few 100W (micro-inverters) to several kilowatts (residential central inverters).

Transphorm presents the TPH3205WS as enabling ultra-high-efficiency power conversion circuits, such as a 2.4kW, bridgeless totem-pole PFC exhibiting near 99% PFC efficiency at 100 kHz operation. The totem-pole PFC, when combined with a GaN-based dc-dc conversion stage, enables a greatly simplified 80 PLUS titanium power supply design providing power densities unachievable with Si-based designs. Transphorm also cites the TPH3205WS’s superior dynamic R(on) performance; claiming that in 2009, it was the first company to demonstrate reliable and stable on resistance across the full range of switching voltages from DC to 400V. This newest device extends this area with an R(on) increase under switching of only 5% at 400V, compared to other competitively rated devices with an almost 90% increase. Transphorm saya it has demonstrated the TPH3205WS in a 3kW inverter showing test results at 100 kHz and a peak efficiency of 98.8%, and over 99% at 50 kHz.

Engineering samples of the TPH3205WS are available now from stock and production release is scheduled at the end of June.

Transphorm; www.transphormusa.com

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