600V HEMT GaN for power supply designs

600V HEMT GaN for power supply designs

Technology News |
By Nick Flaherty

Infineon Technologies has started in-house production of a 600 V gallium nitride HEMT transistor using its hybrid-drain-embedded gate injection transistor (HD-GIT) technology.

The CoolGaN HD-GIT devices combine a robust gate structure, internal electrostatic discharge (ESD) protection and boosted dynamic RDS(on) by exploiting the intrinsic properties of GaN. This includes a breakdown field that is ten times higher than silicon, and twice the electron mobility, while the output charge is ten times lower as is the zero reverse recovery charge and gate charge with linear output capacitance (COSS).

The HD-GIT architecture provides significant design advantages such as very low RDS(on), improved efficiency in resonant circuits, the use of new topologies and current modulation, as well as fast and nearly lossless switching.

The parts are aimed at applications from industrial switch mode power supplies (SMPS) for servers, telecom, and solar to consumer applications, such as chargers and adapters, motor drives and LED lighting systems.

The company is now releasing the complete portfolio of its 600V CoolGaN devices to the broader market, based on Infineon’s fully owned and controlled supply chain. Having the manufacturing line in house allows more flexibility in the technology that can be applied for other GaN architectures such as HD-GIT rather than enhanced or depletion mode HEMT devices.

The expanded GaN portfolio includes a wide range of discrete and fully integrated GaN devices that exceed JEDEC lifetime requirements in JESD47 and JESD22.

The discrete CoolGaN GIT HEMT devices are available in DSO-20-85, DSO-20-87, HSOF-8-3, LSON-81-, and TSON-8 top- and bottom-side cooled (TSC/BSC) JEDEC-compliant packages and in multiple on-state resistance (R DS(on),max) values ranging from 42 to 340 mΩ.

The integrated IPS devices come as half-bridge and single-channel devices. Half-bridge packages integrate two GaN switches and are housed in a TIQFN-28 package with R DS(on) max values of (2x) 190-650 mΩ. Single-channel solutions are available in a thermally-enhanced TIQFN-21 package with RDS(on) max values in the range of 130-340 mΩ.

The CoolGaN TSC power packages address higher power requirements for more compact and lightweight products with high power density, improved energy efficiency, and reduced total system costs.

The CoolGaN 600 V GIT HEMT portfolio will be showcased at PCIM Europe 2023 and is in volume production and samples can be ordered now.

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