600V super junction, fourth-generation MOSFETs
The new series achieves a high speed switching performance while keeping the low ON-resistance level of conventional DTMOS IV – all without loss of power. This is accomplished through the reduction of parasitic capacitance between Gate and Drain, (typical Ciss ranges from 3000 to 6500 pF) which also contributes to improved power efficiency and downsizing of products.
Using Toshiba’s single epitaxial process, the DTMOS IV-H series of super junction MOSFETs is suited to applications that require high reliability, power efficiency and a compact design.
Gate pattern optimisation results in a 45% reduction in Gate-Drain charge (typical Qg ranges from 65 to 135 nC) when compared with conventional DTMOS IV. The new product lineup features low ON-resistance (RDS(ON) MAX at VGS=10V ranges from 0.088 to 0.040Ω) and the devices only suffer a small increase in low ON-resistance at high temperatures due to the use of the single epitaxial process. Drain current for the devices ranges from 30.8 to 61.8A.
The new DTMOS IV-H series is currently available in a T0-247 package, with additional package options, including 8 x 8mm DFN, TO-220 and TO-220SIS becoming available soon.
Toshiba Electronics Europe; www.toshiba-components.com
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