600V super junction N-channel power MOSFET with low on resistance

600V super junction N-channel power MOSFET with low on resistance

New Products |
By Nick Flaherty

Toshiba Electronics Europe has introduced a series of 600V N-channel power MOSFETs with on resistance as low as 55mΩ  in a 4pin TOLL Kelvin package.

The first product in the 600V DTMOSVI series is the TK055U60Z1, which is based on Toshiba’s latest-generation process with a super junction structure. The RDS(on) of 55mΩ is a 13% improvement over similar devices in the company’s established DTMOSIV-H series. In addition, the RDS(on) x Qgd, which is the figure of merit for MOSFET performance, is improved by approximately 52%.

This improvement in the figure of merit helps reduce losses in power designs, so the target applications include high-efficiency switching power supplies in data centres, power conditioners for photovoltaic generators, and uninterruptible power systems.

The MOSFET uses a leadless TOLL package, which features a Kelvin connection for the signal source terminal and helps provide the lower on resistance. As a result, the source wire’s inductance has less impact, reducing switching oscillation, which enhances switching performance when the MOSFET operates at high gating speeds. The applied pin shaping ensures proper solder connections, increases mounting reliability and makes visual inspection easier.

The maximum channel temperature (Tch) is 150°C. The typical RDS(on) of 47mΩ is specified at a gate-source voltage of 10V while the typical total gate charge (Qg), gate-drain charge (Qgd) and input capacitance (Cis) are 65nC, 15nC and 3680pF, respectively.

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