600V superjunction MOSFET lowers conduction and switching losses
The Vishay Siliconix n-channel SiHP065N60E reduces on-resistance by 30 % compared with previous 600 V E Series MOSFETs to 65 mΩ at 10 V with 44 % lower gate charge at 49 nC. This gives the industry’s lowest combination of gate charge and on-resistance, a key figure of merit (FOM) for 600 V MOSFETs used in power conversion applications.
“We are committed to providing our customers with a broad line of MOSFET technologies that support all stages of the power conversion process, from high-voltage inputs to the low-voltage outputs required by the latest electronic systems,” said David Grey, senior director of market development for Vishay. “With the SiHP065N60E and the upcoming fourth-generation 600 V E Series family, we are addressing the need for efficiency and power density improvements in the first stages of the power system architecture — power factor correction and subsequent high-voltage DC/DC converter blocks.”
Built on Vishay’s latest energy-efficient E Series superjunction technology, the SiHP065N60E features low maximum on-resistance of 0.065 Ω at 10 V and ultra-low gate charge down to 49 nC, giving an FOM of 2.8 Ω*nC.
For higher switching performance, the SiHP065N60E provides low effective output capacitances Co(er) and Co(tr) of 93 pf and 593 pF, respectively. These values translate into reduced conduction and switching losses to save energy in power factor correction and hard-switched DC/DC converter topologies for telecom, industrial, and enterprise power systems.
Offered in the TO-220AB package, the device is RoHS-compliant, halogen-free, and designed to withstand overvoltage transients in the avalanche mode with guaranteed limits through 100 % UIS testing.
Samples and production quantities of the SiHP065N60E are available now, with lead times of 10 weeks.
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