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650-V n-channel power MOSFET series adds 23 new high power density devices

650-V n-channel power MOSFET series adds 23 new high power density devices

New Products |
By eeNews Europe



The 22 new devices in eight different packages offer an extended on-resistance range from 30 mΩ to 600 mΩ at 10 V and broaden the series’ maximum current ratings from 6 A to 105 A. Based on the next generation of Vishay Siliconix Super Junction Technology, the 650 V E Series MOSFETs allow the company to offer extended headroom for applications that require additional input-voltage safety margin in its renewable, industrial, lighting, telecommunications, consumer, and computing markets.

The devices introduced today bring the total number of 650 V E Series MOSFETS to 26. All E Series devices offer ultra-low on-resistance and gate charge that translate into extremely low conduction and switching losses to save energy in high-power, high-performance switch mode applications, including power factor correction, server and telecom power systems, welding, uninterruptable power supplies (UPS), battery chargers, LED lighting, semiconductor capital equipment, adaptors, and solar inverters.

The devices are designed to withstand high energy pulses in the avalanche and commutation mode with guaranteed limits through 100% UIS testing. The MOSFETs are RoHS-compliant.

Availability

Samples of these new power MOSFETs are available today, with lead times of 16 to 17 weeks for production orders.

More information about the E Series of power MOSFETs at
www.vishay.com/mosfets/e-series-high-voltage-super-junction

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