650-V SiC Schottky solution improves system performance in high-power industrial applications
Wide bandgap semiconductors such as SiC feature the most advanced material that is being considered by many power electronics and systems designers in their new designs. SiC offers a number of benefits compared to silicon material including a higher breakdown field strength and higher thermal conductivity. The attributes allow designers to create products with better performance characteristics encompassing zero reverse recovery, temperature independent behavior, higher voltage capability and higher temperature operation to achieve new levels of performance, efficiency and reliability.
Microsemi’s new 650V SiC Schottky diode product portfolio includes: APT10SCD65K (650 V, 10 A, TO-220 package); APT10SCD65KCT (650 V, 10 A, common cathode TO-220 package); APT20SCD65K (650 V, 20 A, TO-220 package) and APT30SCD65B (650 V, 30 A, TO-247 package).
The new solutions are also used in the company’s power modules, which are used aerospace, welding, battery charging and other high-power industrial applications.
Availability
Microsemi’s new 650 V SiC Schottky diodes are in production now.
Visit Microsemi at www.microsemi.com
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