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650-V silicon carbide Schottky barrier diode range is extended to broaden application scope

650-V silicon carbide Schottky barrier diode range is extended to broaden application scope

New Products |
By eeNews Europe



The 6 A, 8 A and 10 A devices are now available in addition to the 12 A SBD that entered volume production earlier in 2013.

The SBD is suited to applications including power conditioners for photovoltaic power generation systems. SBDs can also act as replacements for silicon diodes in switching power supplies, where they are 50% more efficient.

SiC power devices offer more stable operation than current silicon devices – even at high voltages and currents – as they reduce heat dissipation during operation. They meet diverse industry needs for smaller, more effective communications devices and suit industrial applications ranging from servers to inverters and trains to automotive systems.

The Toshiba SBD range features a maximum reverse recovery current (IRRM) of 90 µA @ 650 V. All devices are housed in TO-220 packages.

Visit Toshiba at www.toshiba-components.com

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