650V GaN variant targets asymmetrical topologies
STMicroelectronics has launched a new version of its MasterGaN devices and showed at CES 2021 for the first time.
MasterGaN2 is the first in the new family to contain two asymmetric gallium-nitride (GaN) transistors for soft-switching and active-rectification converter topologies.
The 650V normally-off GaN transistors have on-resistance (RDS(on)) of 150mΩ and 225mΩ. Each is combined with an optimized gate driver, making GaN technology as easy to use as ordinary silicon devices. By combining advanced integration with GaN’s inherent performance advantages, MasterGaN2 further extends the efficiency gains, size reduction, and weight savings of topologies such as active clamp flyback.
The system-in-package (SiP) devices combines the two GaN High-Electron-Mobility Transistors (HEMTs) and associated high-voltage gate drivers in the same package with all necessary protection mechanisms built-in. The designer can connect external devices including Hall sensors and a controller such as a DSP, FPGA, or microcontroller directly to the MasterGaN device as the inputs are compatible with logic signals from 3.3V to 15V, which helps simplify the circuit design and bill of materials, permits a smaller footprint, and streamlines assembly. This helps raise the power density of adapters and fast chargers.
The built-in protection comprises low-side and high-side under-voltage lockout (UVLO), gate-driver interlocks, a dedicated shutdown pin, and over-temperature protection. The 9mm x 9mm x 1mm GQFN package is optimized for high-voltage applications, having over 2mm creepage distance between high-voltage and low-voltage pads.
MasterGaN2 is in production now, priced from $6.50 for orders of 1000 pieces.
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