650V IGBT for solar inverters
Magnachip Semiconductor has launched a 650V insulated-gate bipolar transistor (IGBT) for solar inverters.
The IGBT uses a field stop trench technology for fast switching speed and high breakdown voltages and the company will begin mass production this month.
The current density of 75A for this new 650V IGBT was improved by 30% compared to the prior generation by adopting the latest technology. The IGBT is also designed to provide a minimum short-circuit withstand time of 5µs and it is optimized for parallel switching because of its positive temperature coefficient. The parallel switching of this IGBT will increase the load current and thus the maximum output power.
The device also has anti-parallel diodes for fast switching and low switching loss, while guaranteeing a maximum operating junction temperature of 175°C. Based on standards issued by the Joint Electron Device Engineering Council (JEDEC), this new IGBT can be widely used for applications requiring strict power level and high efficiency, such as solar boost inverters and converters, uninterruptible power supplies and universal power inverters.
Omdia, a global market research firm, estimates that the global market for IGBTs in the renewable energy sector will grow 15% annually from 2022 to 2025..
“Magnachip’s first IGBT was introduced in 2013, and since then, we have been committed to developing high-efficiency products for a variety of markets, while strengthening our presence around the world,” said YJ Kim, CEO of Magnachip.
|
Model |
VCES [V] |
IC [A] TC=100℃ |
Package |
|
MBQ75T65P |
650V |
75A |
TO-247 |
|
MBQ40T120Q |
1200V |
40A |
TO-247 |
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