650V silicon carbide Schottky for high-power industrial applications
SiC, as a wide bandgap semiconductor, offers a number of benefits compared to silicon material including a higher breakdown field strength and higher thermal conductivity. These attributes allow designers to create products with better performance characteristics encompassing zero reverse recovery, temperature independent behaviour, higher voltage capability and higher temperature operation.
This 650V SiC Schottky diode product portfolio includes:
• APT10SCD65K (650V, 10A, TO-220 package)
• APT10SCD65KCT (650V, 10A, common cathode TO-220 package)
• APT20SCD65K (650V, 20A, TO-220 package)
• APT30SCD65B (650V, 30A, TO-247 package)
These new solutions are also used in the company’s power modules, which are used aerospace, welding, battery charging and other high-power industrial applications.
Microsemi; www.microsemi.com
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