700, 1200 and 1700V SiC diode modules maximise switching efficiency
Microchip has launched three Schottky Barrier Diode (SBD)-based silicon carbide SiC power modules with 700, 1200 and 1700V variants.
The modules have various topologies including Dual Diode, Full Bridge, Phase Leg, Dual Common Cathode and 3-Phase bridge, in addition to offering different current and package options. The addition of the SBD modules simplifies designs by integrating multiple SiC diode die with the option to mix and match substrate and baseplate material into a single module – which maximizes switching efficiency, reduces thermal rise and allows for a smaller system footprint.
“SiC technology adoption and expansion is a driving force in today’s system innovation and Microchip is at the forefront, collaborating with customers across all segments and global regions,” said Leon Gross, vice president of Microchip’s Discrete Product Group business unit. “Our focus continues to be delivering reliable and innovative solutions. From definition to product release, our SiC technology provides superior reliability and ruggedness, helping power system designers to ensure a long application life with no degradation in performance.”
The 700, 1200 and 1700V SBD modules use Microchip’s latest SiC die, which maximizes system reliability and ruggedness and enables stable and lasting application life. A high avalanche performance allows system designers to reduce the need for snubber circuits, and the body diode stability allows designs to use the internal body diode without long-term degradation.
The company’s 30 kW 3-Phase Vienna Power Factor Correction (PFC), discrete and SP3/SP6LI module drive reference designs/boards provide system developers tools to help reduce development cycle times.
Microchip’s 700, 1200 and 1700V SiC SBDs power modules are released and available for order. The portfolio is supported by a range of SPICE models, driver board reference designs and a PFC Vienna reference design. The modules are available in production volumes along with their associated support offerings. A variety of die and package options are available for the SiC MOSFETs and SiC diodes.