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750-W GaN on SiC RF power transistor delivers high-power performance

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By eeNews Europe


The MDSGN-750ELMV delivers outstanding, highest power performance in a full range of air traffic control and collision avoidance equipment. Targeted applications include commercial secondary surveillance radar (SSR), which is used globally to interrogate and identify aircrafts in airport locales and regional centers within about a 200 mile range.

The MDSGN-750ELMV transistor delivers unparalleled performance of 750 W of peak power with 17 dB of power gain and typical 70 percent drain efficiency when operating at 1030/1090 MHz to provide the most power in one single-ended device of its type covering this band.

In addition, the new RF device is capable of handling the demanding commercial Mode-S ELM (Extended Length Message) pulsing conditions for both the 1030MHz ground based interrogators and 1090 MHz airborne transponders and can be used in the output stage of high performance ground. ELM makes air travel safer by facilitating the communication of shared weather and air traffic situational awareness information to aircrafts within a regional locale. It is also ideal for use in commercial air-to-air traffic alert and collision avoidance systems (TCAS) and in IFF (Identify Friend or Foe) systems, which are essential in protecting friendly aircrafts within a specific area.

GaN on SIC HEMT provide several benefits compared with alternative process technologies including higher power performance, bill-of-material cost savings, and a reduced device-size footprint.

The MDSGN-750ELMV is offered in a single-ended package and is built with 100 percent high-temperature gold (Au) metallization and wires in a hermetically solder-sealed package for long-term reliability.

Visit Microsemi at www.microsemi.com


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