750V SiC MOSFET goes down to 4mOhm resistance
Infineon Technologies has launched a 750V silicon carbide MOSFET with a low on resistance and reduced gate charge for automotive and industrial applications
The CoolSiC G2 has typical R DS(on) values from 4 mΩ up to 60 mΩ at 25°C, making it suitable for a wide range of applications, including on-board chargers (OBCs), DC-DC converters, auxiliaries for electric vehicles (xEVs) as well as industrial applications in EV charging, solar inverter, energy storage systems, telecom and SMPS.
The R DS(on) of 4 and 7 mΩ enable lower losses in static-switching applications such as eFuse, high-voltage battery disconnect switches, solid-state circuit breakers, and solid-state relays. The 4 mΩ comes from a top-side cooled Q-DPAK package that is designed to provide optimal thermal performance and reliability.
The technology also exhibits an improved figure of merit (FoM) from the R DS(on) x Q OSS and best-in-class R DS(on) x Q fr, contributing to reduced switching loss in both hard-switching and soft-switching topologies with superior efficiency in hard-switching cases. The reduced gate charge allows for faster switching and reduces gate drive losses, making them more efficient in high-frequency applications.
The CoolSiC MOSFETs 750 V G2 also provides a high threshold voltage V GS(th),typ of 4.5 V at 25°C with an ultra-low Q GD/Q GS ratio, which reinforce robustness against parasitic turn-on (PTO). The technology also allows for extended gate driving capabilities, supporting static gate voltages of up to -7 V and transient gate voltages of up to -11 V. This enhanced voltage tolerance provides engineers with greater design margins and best compatibility with other devices in the market.
The CoolSiC 750 V G2 meets AEC Q101 standards for automotive-grade parts and JEDEC standard for industrial-grade parts, and Q-DPAK 4/7/16/25/60 mΩ samples are available to order.
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