80/100V MOSFET aims for 1.2mΩ on resistance
Nexperia has launched a 100V MOSFET optimized for low RDSon, low spiking and high efficiency in switching applications
Nexperia expanded its NextPower MOSFET portfolio with 80 V and 100 V MOSFET devices in LFPAK packaging with industry-standard 5×6 mm and 8×8 mm footprints for servers, power supplies, fast chargers and USB-PD chargers.
The 80/100 V power devices have low RDS(on) from 1.8 mΩ to 15 mΩ, 31% lower than previously, with plans for a 1.2 mΩ.
- Interactive datasheets for MOSFET behaviour analysis
- 100V MOSFET with reduced spiking with LFPAK56 and LFPAK88 packaging
The devices also have a low Qrr, which Nexperia says is important due to its impact on spiking and, in turn, the amount of electromagnetic interference (EMI).
Many MOSFET manufacturers focus on achieving high efficiency through low QG(tot) and low QGD, when benchmarking the switching performance of their devices against alternative offerings.
By focusing on Qrr, Nexperia says it has considerably reduced the level of spiking produced by its NextPower 80/100 V devices and so also lower the amount of EMI they produce. This brings significant benefits for end users by reducing the probability of a costly late-stage redesign to include additional external components if their application fails electromagnetic compatibility (EMC) testing.
Nexperia also plans to further strengthen its NextPower 80/100 V portfolio later this year with the release of an additional LFPAK88 MOSFET offering RDS(on) down to 1.2 mΩ @ 80 V, as well as introducing the power dense CCPAK1212 to the portfolio.
www.nexperia.com/nextpower-80-100V-MOSFETs
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