80V GaN FET qualified for automotive LiDAR

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By Nick Flaherty

The EPC2214 80 V, 20 mΩ, eGaN FET has a 47 A pulsed current rating in a 1.8 mm2 footprint and is used for firing the lasers in lidar systems as the FET can be triggered to create high-current with extremely short pulse widths.  The short pulse width leads to higher resolution, and the higher pulse current allows the lidar system to discern objects at greater distances.

To complete AEC Q101 testing, EPC’s eGaN FETs underwent rigorous environmental and bias-stress testing, including humidity testing with bias (H3TRB), high temperature reverse bias (HTRB), high temperature gate bias (HTGB), temperature cycling (TC), as well as several other tests.  Of note is that EPC’s WLCS packaging passed all the same testing standards created for conventional packaged parts, demonstrating that the superior performance of chip-scale packaging does not compromise ruggedness or reliability. These eGaN devices are produced in facilities certified to the Automotive Quality Management System Standard IATF 16949.

“This new automotive product is the most recent in what will be a constant stream of EPC transistors and integrated circuits designed to enable autonomous driving and improve fuel economy and safety. Our eGaN technology is faster, smaller, more efficient, lower cost, and more reliable than the aging silicon power MOSFET used in today’s vehicles,” said Alex Lidow CEO and co-founder of EPC.

The company’s eGaN technology has been in mass production for over nine years, accumulating billions of hours of experience in the field for automotive applications such as lidar (Light Detection and Ranging) and radar for autonomous cars, 48 V to 12 V DC-DC converters used in data centre computers, ultra-high fidelity infotainment systems, and high-intensity headlamps for trucks.  

The EPC2214 eGaN FET is priced at 2.5Ku/reel at $0.72 each and is available for immediate delivery from Digi-Key.

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