80V MOSFETs boost power supply efficiency
Toshiba has added 80V N-channel power MOSFETs to its U-MOS X-H range for switching power supplies in data centres and communication base stations. The range includes the TPH2R408QM in a small outline SOP Advance surface mount package and the TPN19008QM in a TSON Advance package.
The drain-source on resistance (RDSon) in the 80V U-MOS X-H products is approximately 40 per cent lower than that of 80V products in the current generation process U-MOS VIII-H series products. The trade-off between the drain-source On-resistance and the gate charge characteristics has also been improved by optimising the device structure. As a result, the devices have a power dissipation of 210W for both devices.
Compared with TPH4R008NH (U-MOS VIII-H series), the TPH2R408QM has improved its drain-source On-resistance x total gate charge by approximately 15 per cent, drain-source On-resistance x gate switch charge by approximately 10 per cent, and driain-source On-resistance x output charge by approximately 31 per cent. The RDSon of the MOSFETs is 2.43mΩ (max) @VGS=10V for the TPH2R40QM and 19mΩ (max) @VGS=10V for the TPN19008QM.
Main Specifications
|
(Unless otherwise specified, @Ta=25℃) |
||||
|
Part number |
||||
|
Absolute Maximum ratings |
Drain-source voltage VDSS (V) |
80 |
80 |
|
|
Drain current (DC) ID (A) |
@Tc=25℃ |
120 |
34 |
|
|
Channel temperature Tch (℃) |
175 |
175 |
||
|
Electrical characteristics |
Drain-source On-resistance RDS(ON) max (mΩ) |
@VGS=10V |
2.43 |
19 |
|
@VGS=6V |
3.5 |
28 |
||
|
Total gate charge (gate-source plus gate-drain) Qg typ. (nC) |
87 |
16 |
||
|
Gate switch charge Qsw typ. (nC) |
28 |
5.5 |
||
|
Output charge Qoss typ. (nC) |
90 |
16.5 |
||
|
Input capacitance Ciss typ. (pF) |
5870 |
1020 |
||
|
Packages |
Name |
SOP Advance |
TSON Advance |
|
|
Size typ. (mm) |
5.0×6.0 |
3.3×3.3 |
||
|
|
||||
Shipments start today.
If you enjoyed this article, you will like the following ones: don't miss them by subscribing to :
