850nm infrared emitters support high drive currents to 1A
The VSMY7850X01 emitter contains a 42 mil chip and is designed for high drive currents up to 1A and pulses to 5A, while the VSMY7852X01 features a 20 mil chip for high drive currents up to 250mA and pulses to 1.5A. Due to the devices’ low thermal resistivity of 10 K/W for the VSMY7850X01 and 15 K/W for the VSMY7852X01, the maximum current can be employed over almost the entire operating temperature range of -40 to +100°C. Vishay’s SurfLight surface emitter technology uses a unique die construction in which all the light generated inside the semiconductor is emitted through the top surface of the chip.
The result is ultra-high radiant intensity of 170mW/sr and high optical power of 520mW at 1A with a low forward voltage of 2.0V for the VSMY7850X01, and intensity of 42mW/sr and optical power of 130mW at 250mA with a low forward voltage of 1.8V for the VSMY7852X01. The devices released today are AEC-Q101 qualified and feature a ± 60° angle of half intensity. The emitters are optimized for IR illumination in CMOS cameras, driver assistance systems, 3D TV and 3D imaging, night vision, and IR flash applications. Their fast switching times of 15ns make them well suited for machine vision IR data transmission.
Visit Vishay Intertechnology at www.vishay.com
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