850V Ultra-Junction MOSFETs claim industry’s lowest on-resistance
The Ultra-Junction X-Class Power MOSFETs with fast body diodes exhibit on-state resistances at 33 mΩ in the SOT-227 package and 41 mΩ in the PLUS264, along with low gate charges and superior dv/dt performance. The avalanche capability enhances the ruggedness, preventing device failure induced by voltage transients and accidental turn-on of parasitic bipolar transistors. The fast soft-recovery body diode also helps reduce switching losses and electromagnetic interference (EMI).
With current ratings up to 110A, the devices are aimed at high efficiency, high power density applications such as switched mode and resonant mode power supplies, AC and DC motor drives, DC-DC converters, robotic and servo control, electric vehicle battery chargers, renewable energy inverters, and Power Factor Correction (PFC) circuits.
The new 850V X-Class Power MOSFETs with HiPerFET body diodes are available in TO-220, TO-263HV, SOT-227, TO-247, TO-264, PLUS264 and TO-268HV packaging. Some example part numbers include IXFH20N85X, IXFK50N85X, IXFB90N85X and IXFN110N85X, with current ratings of 20A, 50A, 90A, and 110A, respectively.
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