900-V silicon carbide MOSFET

900-V silicon carbide MOSFET

New Products |
By eeNews Europe

Cree claims that this 900V “platform” enables smaller and higher-efficiency next-generation power conversion systems – at cost parity with silicon-based solutions.

The company comments, “When compared to equivalent silicon MOSFETs, this 900-V platform enables a new market by broadening the power range we can address in end systems. Following our 1200-V MOSFETs, which exhibit superior performance to high-voltage IGBTs, we are now able to out-perform lower-voltage superjunction silicon MOSFET technology at 900V. This platform delivers vastly superior characteristics, thereby providing power designers with the potential to innovate smaller, faster, cooler, and more-efficient power solutions… beyond the reach of anything currently achievable with silicon.”

Built on Cree’s SiC planar technology, the 900-V MOSFET platform addresses application segments in which a higher DC-link-voltage is desirable. The lead product (C3M0065090J) features the lowest on-resistance rating (65 mΩ) of any 900-V MOSFET device currently available on the market. In addition to the industry-standard TO247-3 and TO220-3 packages, the new device is also offered in a low-impedance D2Pak-7L

surface-mount package with a Kelvin connection to help minimise gate ringing.

Existing 900-V silicon MOSFETs (Cree adds) have severe limitations for high-frequency switching circuits due to extremely high switching losses and poor internal body diodes. Further limiting the use of silicon MOSFETs is the RDS(ON) that increases three times over temperature, which causes thermal issues and significant derating. Cree says that its 900-V MOSFET technology delivers low RDS(ON) at higher temperatures, enabling a size reduction of the thermal-management system.

The C3M0065090J is rated at 900V/32A, with an RDS(ON) of 65 mΩ at 25° C. At higher temperature operation (TJ = 150°C), the RDS(ON) is 90 mΩ. Packaged parts will be stocked through DigiKey and Mouser.


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