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There are 72 results for hemts

ROHM mass producing 650-V GaN HEMTs
ROHM mass producing 650-V GaN HEMTs
Business news | - By Jean-Pierre Joosting
ROHM has started mass production of its 650-V GaN HEMTs (designated GNP1070TC-Z and GNP1150TCA-Z) optimized for a wide range…
Fully epitaxial ScAlN transistor is reconfigurable
Fully epitaxial ScAlN transistor is reconfigurable
Technology News | - By Peter Clarke
...It can be laid down on GaN and AlGaN substrates. ScAlN devices are the first nitride-based ferroelectric semiconductors. Hysteretic…
Modelithics Qorvo GaN library offers embedding models
Modelithics Qorvo GaN library offers embedding models
New Products | - By Jean-Pierre Joosting
...latest version offers new models for Qorvo’s QPD1025, QPD1028, QPD1425, and QPD1425L discrete GaN-on-SiC HEMTs. Version 23.5.1 also offers…
High-speed semiconductor device models compared
High-speed semiconductor device models compared
Technology News | - By Rich Pell
...high-electron-mobility transistors (HEMTs). Accurate simulation of these devices – which promise to revolutionize wireless communications – must capture the…
Simulation framework predicts thermal transport in 5G/6G RF devices
Simulation framework predicts thermal transport in 5G/6G RF devices
Technology News | - By Jean-Pierre Joosting
...advanced RF devices intended for 5G and 6G wireless communication for the first time. Case studies with GaN high-electron-mobility…
Simulation boost for 6G RF devices
Simulation boost for 6G RF devices
Technology News | - By Nick Flaherty
...high-electron-mobility transistors (HEMTs) and InP heterojunction bipolar transistors (HBTs) revealed peak temperature rises that are up to three times…
Innoscience extends its 650-V HEMT family
Innoscience extends its 650-V HEMT family
New Products | - By Jean-Pierre Joosting
...join previously-announced 140 mΩ, 240 mΩ and 500 mΩ RDS(on) parts, creating a significant portfolio of available devices. Importantly,…
Performance and reliability data of 15V and 650V GaN power devices
Performance and reliability data of 15V and 650V GaN power devices
Technology News | - By Nick Flaherty
...converter design with GaN HEMTs in half bridge configuration with efficiency over 80% at tens of MHz. www.innoscience.com Other…
Rohm, Delta team for next generation GaN in power supplies
Rohm, Delta team for next generation GaN in power supplies
Business news | - By Nick Flaherty
...joint venture Rohm opens SiC power building Rohm has already established a mass production system for 150V GaN HEMTs…
Cambridge GaN Devices launches its first integrated parts
Cambridge GaN Devices launches its first integrated parts
Business news | - By Nick Flaherty
...products can be seamlessly interfaced with gate drivers which make ICeGaN-based GaN HEMTs easy to use, like a Silicon…


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