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a-IGZO flexible electronics: worth 1.5 million euros in ERC starting grant

a-IGZO flexible electronics: worth 1.5 million euros in ERC starting grant

Technology News |
By Julien Happich



With his research, Kris Myny wants to realize a breakthrough in thin-film transistor technology by introducing design innovations around unipolar n-type transistor circuits based on amorphous Indium-Gallium-Zinc-Oxide (a-IGZO) as semiconductor. These are currently considered as the most promising transistors for next-generation curved, flexible, or even rollable electronic applications.

“My goal is to use these transistors to introduce a new logic family for building digital circuits that will drastically decrease the power consumption compared to current flexible circuits. And this of course without compromising the speed of the electronics. At the same time, we will also make the transistors smaller, in a way that is compatible with large-area manufacturing. In addition, I will also look at new techniques to design ultralow-power systems in the new logic style. These will allow building next-generation large-area flexible applications such as displays, IoT sensors, or wearable healthcare sensor patches”, commented Myny.

In 2017, the European Commission plans to invest a record 1.8 billion in its ERC grant scheme, of which a sizable part will be aimed at Starting Grants, reserved for young scientists with two to seven years of post-PhD experience.

Visit imec at www.imec.be

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