Accuracy boost for GaN and SiC semiconductor analysis

Accuracy boost for GaN and SiC semiconductor analysis

New Products |
By Nick Flaherty

Teledyne LeCroy has launched an optically isolated 1GHz measurement system for gallium nitride (GaN) and silicon carbide (SiC) power devices.  

The DL-ISO High Voltage Optically Isolated 1 GHz Probe and Power-Device test software combined with the High Definition Oscilloscopes (HDO) provide accuracy of 1.5%.

The 1 GHz bandwidth meets requirements to measure GaN device 1 ns rise times and the HDO provides up to 20 GS/s sample rate at 12-bit resolution for the most faithful capture and display of high-speed GaN and SiC device signals.

The Power-Device software package simplifies the analysis of GaN and SiC devices with automated JEDEC switching loss and other measurements, and color-coded overlays to highlight the relevant, measured areas.

The DL-ISO probes are offered in bandwidths of 350 MHz, 700 MHz and 1 GHz. Availability of the probe and Power-Device software is 14 weeks. Compatible Teledyne LeCroy HDOs range in bandwidth from 350 MHz to 8 GHz, with 12bit resolution all the time and up to 20 GS/s sample rate.; 

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