Active-clamp MOSFETs feature low on resistance, AEC-Q101
The new 357 series protects drivers against possible damage from voltage surges, as caused by back EMF from the inductive load. It integrates a pull-down resistor, series resistor and Zener diode, all of which helps reduce the external part count and save PCB space.
The devices withstands a maximum drain-source voltage (VDSS) of 60V and a maximum drain current (ID) of 0.65A. The low drain-source on-resistance (RDS(ON)) of 800mΩ at VGS=5.0V ensures efficient operation with minimal heat generation.
The single SSM3K357R is housed in a 2.9 x 2.4 x 0.8mm SOT-23F class package, and suitable for relay and solenoid control due to the low operating voltage of 3.0V. As the device is qualified according to AEC-Q101 it is suited for automotive as well as many industrial applications.
The dual SSM6N357R is housed in a 2.9mm x 2.8mm x 0.8mm TSOP6F class package, which enables usage of two devices on a board requiring 42% less mounting area than using two of the single devices.
More information: https://toshiba.semicon-storage.com/de/top.html
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